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savantic semiconductor product specification silicon pnp power transistors 2SB980 d escription with to-3pn package wide area of safe operation large current capability applications for audio frequency output applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(tc=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -120 v v ceo collector-emitter voltage open base -120 v v ebo emitter-base voltage open collector -5 v i c collector current (dc) -6 a i cm collector current-peak -10 a p c collector power dissipation t c =25 70 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pn) and symbol downloaded from: http:///
savantic semiconductor product specification 2 silicon pnp power transistors 2SB980 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-50ma ;r be = ; -120 v v (br)cbo collector-base breakdown voltage i c =-5ma ;i e =0 -120 v v (br)ebo emitter-base breakdown voltage i e =-5ma ;i c =0 -5 v v cesat collector-emitter saturation voltage i c =-4a ;i b =-0.4a -2.0 v v be base-emitter on voltage i c =-1a;v ce =-5v -1.5 v i cbo collector cut-off current v cb =-120v i e =0 -50 a i ebo emitter cut-off current v eb =-5v; i c =0 -50 a h fe-1 dc current gain i c =-1a ; v ce =-5v 60 200 h fe-2 dc current gain i c =-3a ; v ce =-5v 20 downloaded from: http:///
savantic semiconductor product specification 3 silicon pnp power transistors 2SB980 package outline fig.2 outline dimensions downloaded from: http:///

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